参数资料
型号: SI1065X-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/8页
文件大小: 0K
描述: MOSFET P-CH 12V 1.18A SC89-6
产品目录绘图: X-T1-E3 Series SOT-563
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
开态Rds(最大)@ Id, Vgs @ 25° C: 130 毫欧 @ 1.18A,4.5V
Id 时的 Vgs(th)(最大): 950mV @ 250µA
闸电荷(Qg) @ Vgs: 10.8nC @ 5V
输入电容 (Ciss) @ Vds: 480pF @ 6V
功率 - 最大: 236mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SC-89-6
包装: 标准包装
产品目录页面: 1665 (CN2011-ZH PDF)
其它名称: SI1065X-T1-GE3DKR
Si1065X
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
V DS (V)
- 12
R DS(on) ( ? )
0.156 at V GS = - 4.5 V
0.190 at V GS = - 2.5V
0.245 at V GS = - 1.8V
I D (A)
1.18
1.07
0.49
Q g (Typ.)
6.7 nC
? 100 % R g Tested
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
? Load Switch for Portable Devices
SC-89 (3-LEADS)
S
D
1
6
D
Marking Code
D
2
5
D
W
XX
Lot Tracea b ility
and Date Code
G
3
4
S
Part # Code
G
Top V ie w
D
Orderin g Information: Si1065X-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwis e noted)
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
- 12
±8
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
- 1.18 b, c
- 0.94 b, c
-8
- 0.2 b, c
0.236 b, c
0.151 b, c
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
t ?? 5 s
Symbol
Typical
440
Maximum
530
Unit
Maximum Junction-to-Ambient a, b
Steady State
State
R thJA
540
650
°C/W
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
PDF描述
SI1067X-T1-GE3 MOSFET P-CH 20V 1.06A SC89-6
SI1070X-T1-GE3 MOSFET N-CH 30V 1.2A SOT563F
SI1071X-T1-GE3 MOSFET P-CH 30V 960MA SC89-6
SI1072X-T1-GE3 MOSFET N-CH 30V SC89
SI1120-A-GM IC PROXIMITY/AMBIENT SEN 8ODFN
相关代理商/技术参数
参数描述
SI106-680 制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT Power Inductor
SI106-680K 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI106-681 制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT Power Inductor
SI106-681K 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI106-6R8L 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor