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| 型号： | SI1065X-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 1.18A SC89-6 |
| 产品目录绘图： | X-T1-E3 Series SOT-563 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 1.18A，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.8nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 6V |
| 功率 - 最大： | 236mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SC-89-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1665 (CN2011-ZH PDF) |
| 其它名称： | SI1065X-T1-GE3DKR |
Si1065X
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 12
- 8.47
2.33
V
mV/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 8 V
V DS = - 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V, T J = 85 °C
- 0.45
- 0.95
± 100
-1
- 10
V
nA
nA
μA
On-State Drain
Current a
I D(on)
V DS = ? 5 V, V GS = - 4.5 V
-8
A
V GS = - 4.5 V, I D = - 1.18 A
0.108
0.156
Drain-Source On-State
Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 1.07 A
0.131
0.190
?
V GS = - 1.8 V, I D = - 0.49 A
0.158
0.245
Forward Transconductance
g fs
V DS = - 6 V, I D = - 1.18 A
5.18
S
Dynamic b
Input Capacitance
C iss
480
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 6 V, V GS = 0 V, f = 1 MHz
190
145
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 6 V, V GS = - 5 V, I D = - 1.18 A
V DS = - 6 V, V GS = - 4.5 V, I D = - 1.18
7.2
6.7
0.84
10.8
10.1
nC
Gate-Drain Charge
Q gd
2.7
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = - 6 V, R L = 6.32 ?
I D ? - 0.95 A, V GEN = - 4.5 V, R g = 1 ?
10
13
27
45
27
15
19.5
40.5
67.5
40.5
?
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current a
I SM
8
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
V SD
t rr
Q rr
t a
I S = - 0.63 A
I F = - 0.7 A, dI/dt = 100 A/μs
0.8
29.2
10.22
13.7
1.2
44
15.3
V
nC
ns
Reverse Recovery Rise Time
t b
15.5
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 74320
S12-1619-Rev. D, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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