参数资料
型号: SI1065X-T1-GE3
厂商: Vishay Siliconix
文件页数: 8/8页
文件大小: 0K
描述: MOSFET P-CH 12V 1.18A SC89-6
产品目录绘图: X-T1-E3 Series SOT-563
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
开态Rds(最大)@ Id, Vgs @ 25° C: 130 毫欧 @ 1.18A,4.5V
Id 时的 Vgs(th)(最大): 950mV @ 250µA
闸电荷(Qg) @ Vgs: 10.8nC @ 5V
输入电容 (Ciss) @ Vds: 480pF @ 6V
功率 - 最大: 236mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SC-89-6
包装: 标准包装
产品目录页面: 1665 (CN2011-ZH PDF)
其它名称: SI1065X-T1-GE3DKR
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Revision: 02-Oct-12
1
Document Number: 91000
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