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| 型号： | SI1426DH-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V SC-70-6 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 3.6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | SI1426DH-T1-GE3DKR |
AN815
Vishay Siliconix
Single-Channel LITTLE FOOT R SC-70 6-Pin MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
EVALUATION BOARDS
SINGLE SC70-6
The new single 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the single-channel version.
BASIC PAD PATTERNS
The evaluation board (EVB) measures 0.6 inches by
0.5 inches. The copper pad traces are the same as in Figure 2.
The board allows examination from the outer pins to 6-pin DIP
connections, permitting test sockets to be used in evaluation
testing. See Figure 3.
52 (mil)
6
5
4
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFET s, ( http://www.vishay.com/doc?72286 ) for the basic
pad layout and dimensions. These pad patterns are sufficient
for the low to medium power applications for which this
package is intended. Increasing the drain pad pattern yields a
reduction in thermal resistance and is a preferred footprint.
The availability of four drain leads rather than the traditional
single drain lead allows a better thermal path from the package
to the PCB and external environment.
96 (mil)
71 (mil)
13 (mil)
1
0, 0 (mil)
2
3
26 (mil)
18 (mil)
26 (mil)
PIN-OUT
16 (mil)
Figure 1 shows the pin-out description and Pin 1
identification.The pin-out of this device allows the use of four
pins as drain leads, which helps to reduce on-resistance and
junction-to-ambient thermal resistance.
FIGURE 2.
SC-70 (6 leads) Single
D
D
SOT-363
SC-70 (6-LEADS)
1 6
2 5
D
D
The thermal performance of the single 6-pin SC-70 has been
measured on the EVB, comparing both the copper and
Alloy 42 leadframes. This test was first conducted on the
traditional Alloy 42 leadframe and was then repeated using the
1-inch 2 PCB with dual-side copper coating.
G
3
4
S
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
( http://www.vishay.com/doc?71154 )
Document Number: 71334
12-Dec-03
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI1469DH-T1-GE3 | MOSFET P-CH 20V SC-70-6 |
| SI1470DH-T1-GE3 | MOSFET N-CH 30V SC-70-6 |
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| SI1557DH-T1-E3 | MOSFET N/P-CH 12V SC70-6 |
| SI1563EDH-T1-GE3 | MOSFET N/P-CH 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1427EDH-T1-GE3 | 制造商:Vishay Siliconix 功能描述:P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET P-CH D-S 20V SOT-363 制造商:Vishay Siliconix 功能描述:MOSFET P CH W/ESD 20V 2A SOT363 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, W/ESD, 20V, 2A, SOT363 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.8W ;RoHS Compliant: Yes |
| SI1428EDH | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SI1431DH-T1-E3 | 功能描述:MOSFET 30V 2.0A 1.45W 200 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1431DH-T1-GE3 | 功能描述:MOSFET P-CH 30V 1.7A SOT363 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SI1433DH | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
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