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| 型号： | SI1902DL-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH G-S 20V DUAL SC-70-6 |
| 产品目录绘图： | DL-T1-E3 Series SOT-363 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 660mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 385 毫欧 @ 660ma，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.2nC @ 4.5V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | SI1902DL-T1-GE3DKR |
AN814
Vishay Siliconix
SC-70 (6-PIN)
500
R q JA
P D + 150 C o * 25 C
R q JA
P D + 150 C o * 60 C
Room Ambient 25 _ C
T J(max) * T A
P D +
o o
400 C W
P D + 312 mW
Elevated Ambient 60 _ C
T J(max) * T A
P D +
o o
400 C W
P D + 225 mW
400
300
200
Dual EVB
NOTE: Although they are intended for low-power applications,
devices in the 6-pin SC-70 will handle power dissipation in
excess of 0.2 W.
100
0
1” Square FR4 PCB
Testing
10 -5 10 -4
10 -3
10 -2 10 -1
Time (Secs)
1
10
100
1000
To aid comparison further, Figure 2 illustrates the dual-channel
SC-70 thermal performance on two different board sizes and
two different pad patterns. The results display the thermal
performance out to steady state. The measured steady state
values of R θ JA for the dual 6-pin SC-70 are as follows:
LITTLE FOOT SC-70 (6-PIN )
FIGURE 2. Comparison of Dual SC70-6 on EVB and 1”
Square FR4 PCB.
The results show that if the board area can be increased and
maximum copper traces are added, the thermal resistance
reduction is limited to 20%. This fact confirms that the power
dissipation is restricted with the package size and the Alloy 42
leadframe.
1) Minimum recommended pad pattern (see
Figure 2) on the EVB of 0.5 inches x
0.6 inches.
2) Industry standard 1” square PCB with
maximum copper both sides.
www.vishay.com
2
518 _ C/W
413 _ C/W
ASSOCIATED DOCUMENT
Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper
Leadframe Version, REcommended Pad Pattern and Thermal
Performance, AN815, (http://www.vishay.com/doc?71334) .
Document Number: 71237
12-Dec-03
相关PDF资料 |
PDF描述 |
|---|---|
| SI1926DL-T1-E3 | MOSF N CH DUAL D-S 60V SC-70-6 |
| SI1967DH-T1-E3 | MOSFET 2P-CH 20V 1.3A SC70-6 |
| SI1970DH-T1-GE3 | MOSFET N-CH DUAL 30V SC70-6 |
| SI2300DS-T1-GE3 | MOSFET N-CH 30V SOT-23 |
| SI2302CDS-T1-GE3 | MOSFET N-CH 20V 2.6A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1902DL-T3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 20V 0.66A 6-Pin SC-70 T/R |
| SI1903DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI1903DL_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI1903DL-T1 | 功能描述:MOSFET 20V 0.44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1903DL-T1-E3 | 功能描述:MOSFET 20V 0.44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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