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| 型号： | SI2305ADS-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 5.4A SOT23-3 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 4.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 740pF @ 4V |
| 功率 - 最大： | 1.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
New Product
Si2305ADS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, b
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
100
60
130
75
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 175 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
-8
- 55
2.1
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.45
- 0.8
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 8 V, V GS = 0 V
V DS = - 8 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 4.1 A
-5
0.032
± 100
-1
- 10
0.040
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 3.4 A
0.048
0.060
Ω
V GS = - 1.8 V, I D = - 2.0 A
0.070
0.088
Forward Transconductance a
g fs
V DS = - 5 V, I D = - 4.1 A
8
S
Dynamic b
Input Capacitance
C iss
740
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 4 V, V GS = 0 V, f = 1 MHz
290
190
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 4 V, V GS = - 4.5 V, I D = - 4.1 A
V DS = - 4 V, V GS = - 2.5 V, I D = - 4.1 A
7.8
4.5
1.2
15
9
nC
Gate-Drain Charge
Q gd
1.6
Gate Resistance
R g
f = 1 MHz
1.4
7
14
Ω
Turn-On Delay Time
t d(on)
13
20
Rise Time
Turn-Off DelayTime
t r
t d(off)
V DD = - 4 V, R L = 1.2 Ω
I D ? - 3.3 A, V GEN = - 4.5 V, R g = 1 Ω
35
32
53
48
Fall Time
Turn-On Delay Time
t f
t d(on)
10
5
20
10
ns
Rise Time
Turn-Off DelayTime
Fall Time
t r
t d(off)
t f
V DD = - 4 V, R L = 1.2 Ω
I D ? - 3.3 A, V GEN = - 8 V, R g = 1 Ω
11
22
16
17
33
24
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
Continuous Source-Drain Diode Current
a
I S
I SM
T C = 25 °C
- 1.4
- 10
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I F = - 3.3 A
I F = - 3.3 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.8
33
14
14
19
- 1.2
50
21
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69940
S09-0538-Rev. D, 06-Apr-09
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