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参数资料
| 型号： | SI2367DS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 10/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.8A SOT-23 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 66 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 561pF @ 10V |
| 功率 - 最大： | 1.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
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Revision: 02-Oct-12
1
Document Number: 91000
相关PDF资料 |
PDF描述 |
|---|---|
| SI2377EDS-T1-GE3 | MOSFET P-CH 20V SOT-23 |
| SI3424BDV-T1-GE3 | MOSFET N-CH 30V 8A 6TSOP |
| SI3424DV-T1-GE3 | MOSFET N-CH 30V 5A 6-TSOP |
| SI3433CDV-T1-E3 | MOSFET P-CH 20V 6A 6TSOP |
| SI3438DV-T1-E3 | MOSFET N-CH D-S 40V 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI2371EDS-T1-GE3 | 制造商:Vishay Intertechnologies 功能描述:Single P-Channel 30 V 0.045 O 35 nC Surface Mount Power Mosfet - SOT-23 |
| SI2377EDS-T1-GE3 | 功能描述:MOSFET 20V 4.4A P-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2392DS-T1-GE3 | 功能描述:MOSFET 100V 126mOhm@10V 3.1A N-Ch MV T-FET RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:100 V 闸/源击穿电压: 漏极连续电流:5 A 电阻汲极/源极 RDS（导通）:0.135 Ohms 配置:Single 最大工作温度:+150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| SI2399DS | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET |
| SI2399DS-T1-GE3 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET P-CH 20V SOT-23 制造商:Vishay Siliconix 功能描述:MOSFET P CH W/D 20V 6A SOT23 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, W/D, 20V, 6A, SOT23 制造商:Vishay Intertechnologies 功能描述:MOSFET, P CH, W/D, 20V, 6A, SOT23, Transistor Polarity:P Channel, Continuous Dra 制造商:Vishay Intertechnologies 功能描述:P-CHANNEL 20-V (D-S) MOSFET |
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