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参数资料
| 型号： | SI4807DY-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 84K |
| 代理商： | SI4807DY-E3 |
Si4807DY
Vishay Siliconix
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S FaxBack 408-970-5600
2-1
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(ON) (W)
ID (A)
Gate 1
30
0.035 @ VGS = –10 V
"6
Gate 1
–30
0.054 @ VGS = –4.5 V
"4.8
Gate 2
–30
1.3 @ VGS = –10 V
"0.9
Gate 2
2.2 @ VGS = –4.5 V
"0.7
D
G1
S
P-Channel MOSFET
SO-8
5
6
7
8
Top View
2
3
4
1
G2
NC
G1
D
SD
G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Gate 1
Gate 2
Unit
Drain-Source Voltage
VDS
–30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
"6
"0.9
A
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
"4.8
"0.7
A
Pulsed Drain Current
IDM
"30
"1.5
A
Continuous Source Current (Diode Conduction)a
IS
–1.25
Maximum Power Dissipationa
TA = 25_C
PD
2.3
W
Maximum Power Dissipationa
TA = 70_C
PD
1.0
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
55
_C/W
Notes
a.
Surface Mounted on FR4 Board, t
v 10 sec.
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相关代理商/技术参数 |
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| SI4807DY-T1 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4807DY-T1-E3 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4808DY | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4808DY-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4808DY-T1 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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