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参数资料
| 型号： | SI4807DY-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 84K |
| 代理商： | SI4807DY-E3 |
Si4807DY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V, TJ = 55_C
–5
mA
On-State Drain Currenta
ID(on)
(G1 = G2) VDS = –5 V, VGS = –10 V
–20
A
DiS
OS
R
i
a
rDS1( )
(G1 = G2) VGS = –10 V, ID = –6 A
0.028
0.035
W
Drain Source On State Resistancea
rDS1(on)
(G1 = G2) VGS = –4.5 V, ID = –4.8 A
0.041
0.054
W
Drain-Source On-State Resistancea
rDS2(on)
VG1S = 0 V, VG2S = –10 V, ID = –0.15 A
1.05
1.3
W
rDS2(on)
VG1S = 0 V, VG2S = –4.5 V, ID = –0.1 A
1.65
2.2
Forward Transconductancea
gfs
VDS = –15 V, ID = –6 A
13
S
Diode Forward Voltagea
VSD
IS = –1.25 A, VGS = 0 V
0.7
–1.1
V
Dynamicb
Total Gate Charge
Qg
G1
Gate 1
34
60
C
Total Gate Charge
Qg
Gate 1
VDS = –15 V, VGS(1 2) = –10 V
Gate 2
2.0
5
C
Gate-Source Charge
Qgs
VDS = –15 V, VGS(1, 2) = –10 V
ID = –6 A
Gate 1
6.5
nC
Gate-Source Charge
Qgs
Gate 2
VDS = –15 V VGS(1) = –0 V
Gate 2
0.5
nC
Gate-Drain Charge
Qgd
VDS = –15 V, VGS(1) = –0 V
VGS(2) = –10 V, ID = –0.15 A
Gate 1
6.0
Gate-Drain Charge
Qgd
GS(2)
D
Gate 2
0.2
Turn-On Delay Time
td(on)
V15 V R
15
W
15
25
Rise Time
tr
VDD = –15 V, RL = 15 W
I
1 A V
10 V R
6
W
11
20
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –10 V, RG = 6 W
52
80
ns
Fall Time
tf
20
35
Source-Drain Reverse Recovery Time
trr
IF = –1.25 A, di/dt = –100 A/ms
30
60
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
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