- 您现在的位置：买卖IC网 > Datasheet目录511 > SI5484DU-T1-GE3 (Vishay Siliconix)MOSFET N-CH 20V 12A PPAK CHIPFET Datasheet资料下载
参数资料
| 型号： | SI5484DU-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 12A PPAK CHIPFET |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 7.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 55nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1600pF @ 10V |
| 功率 - 最大： | 31W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? CHIPFET? 单 |
| 供应商设备封装： | PowerPAK? ChipFET 单通道 |
| 包装： | 带卷 (TR) |
Si5484DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free
? TrenchFET ? Power MOSFET
20
0.016 at V GS = 4.5 V
0.021 at V GS = 2.5 V
12
12
16.5 nC
? New Thermally Enhanced PowerPAK ?
ChipFET ? Package
- Small Footprint Area
RoHS
COMPLIANT
- Low On-Resistance
- Thin 0.8 mm Profile
PowerPAK ChipFET Sin g le
1
2
D
3
APPLICATIONS
? Load Switch, PA Switch, and for Portable Applications
D
8
D
7
D
6
D
D
S
D
S
G
4
Marking Code
AF XXX
Lot Tracea b ility
and Date Code
G
5
Bottom V ie w
Orderin g Information: Si54 8 4DU-T1-GE3 (Lead (P b )-free and Halogen-free)
Part # Code
S
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
± 12
12 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
12 a
11.4 b, c
9.1 b, c
40
12 a
2.6 b, c
31
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
20
3.1 b, c
W
T A = 70 °C
2 b, c
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 5s
Steady State
R thJA
R thJC
34
3
40
4
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( http://www.vishay.com/ doc ?73257 ). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73589
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI5485DU-T1-GE3 | MOSFET P-CH 20V 12A PPAK CHIPFET |
| SI5499DC-T1-GE3 | MOSFET P-CH 8V 6A 1206-8 |
| SI5504DC-T1-GE3 | MOSFET N/P-CH 30V CHIPFET 1206-8 |
| SI5511DC-T1-GE3 | MOSFET N/P-CH 30V 1206-8 |
| SI5513CDC-T1-E3 | MOSFET N/P-CH 20V CHIPFET 1206-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5485DU | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI5485DU-T1-E3 | 功能描述:MOSFET 20V 12A 31W 25mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5485DU-T1-GE3 | 功能描述:MOSFET 20V 12A 31W 25mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5486DU | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI5486DU_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。