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| 型号： | SI5933CDC-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 144 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.8nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 276pF @ 10V |
| 功率 - 最大： | 2.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
Si5933CDC
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.144 at V GS = - 4.5 V
I D (A) a
- 3.7
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
- 20
0.180 at V GS = - 2.5 V
0.222 at V GS = - 1.8 V
- 3.0
- 3.0
4.1 nC
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ?
1
APPLICATIONS
? Load Switch for Portable Devices
D 1
S 1
G 1
S 1
S 2
D 1
D 2
D 2
S 2
G 2
Marking Code
DI XXX
Lot Traceability
G 1
G 2
and Date Code
Part #
Bottom View
Code
D 1
D 2
Ordering Information: Si5933CDC-T1-E3 (Lead (Pb)-free)
Si5933CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
±8
- 3.7
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 3.0
- 2.5 b, c
- 2.0 b, c
- 10
- 2.3
- 1.1 b, c
2.8
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.8
1.3 b, c
W
T A = 70 °C
0.8 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 5s R thJA
Maximum Junction-to-Foot (Drain) Steady State R thJF
82 99
35 45
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 130 °C/W.
Document Number: 68822
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5933CDC-T1-GE3 | 功能描述:MOSFET 20V 3.7A 2.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5933DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET |
| SI5933DC-T1 | 功能描述:MOSFET 20V 3.6A 2.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5933DCT1E3 | 制造商:Vishay 功能描述:_ |
| SI5933DC-T1-E3 | 功能描述:MOSFET 20V 3.6A 2.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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