参数资料
型号: SI5933CDC-T1-E3
厂商: Vishay Siliconix
文件页数: 6/11页
文件大小: 0K
描述: MOSFET P-CH 20V 1206-8
标准包装: 3,000
系列: TrenchFET®
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 144 毫欧 @ 2.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 6.8nC @ 5V
输入电容 (Ciss) @ Vds: 276pF @ 10V
功率 - 最大: 2.8W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 1206-8 ChipFET?
包装: 带卷 (TR)
Si5933CDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
N otes:
t 2
t 2
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 1
1. D u ty Cycle, D =
2. Per Unit Base = R thJA = 110 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.02
Single Pulse
0.05
10 -4
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68822 .
www.vishay.com
6
Document Number: 68822
S10-0548-Rev. B, 08-Mar-10
相关PDF资料
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SI5933DC-T1-GE3 MOSFET DUAL P-CH 20V 2.7A 1206-8
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