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| 型号： | SI7123DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 10.2A 1212-8 |
| 产品目录绘图： | DN-T1-E3 Series 1212-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.6 毫欧 @ 15A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 90nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3729pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1664 (CN2011-ZH PDF) |
| 其它名称： | SI7123DN-T1-GE3DKR |
AN822
Vishay Siliconix
TABLE 1: EQIVALENT STEADY STATE PERFORMANCE
Package
SO-8
TSSOP-8
TSOP-8
PPAK 1212
PPAK SO-8
Configuration
Thermal Resiatance R thJC (C/W)
Single
20
Dual
40
Single
52
Dual
83
Single
40
Dual
90
Single
2.4
Dual
5.5
Single
1.8
Dual
5.5
Po w erPAK 1212
49. 8 °C
2.4 °C/ W
Standard SO- 8
8 5 °C
20 °C/ W
Standard TSSOP- 8
149 °C
52 °C/ W
TSOP-6
125 °C
40 °C/ W
PC Board at 45 °C
Figure 4. Temperature of Devices on a PC Board
THERMAL PERFORMANCE
Introduction
A basic measure of a device’s thermal performance is
the junction-to-case thermal resistance, R θ jc, or the
junction to- foot thermal resistance, R θ jf. This parameter
is measured for the device mounted to an infinite heat
sink and is therefore a characterization of the device
only, in other words, independent of the properties of the
object to which the device is mounted. Table 1 shows a
comparison of the PowerPAK 1212-8, PowerPAK SO-8,
standard TSSOP-8 and SO-8 equivalent steady state
performance.
By minimizing the junction-to-foot thermal resistance, the
MOSFET die temperature is very close to the tempera-
ture of the PC board. Consider four devices mounted on
a PC board with a board temperature of 45 °C (Figure 4).
Suppose each device is dissipating 2 W. Using the junc-
tion-to-foot thermal resistance characteristics of the
PowerPAK 1212-8 and the other SMT packages, die
temperatures are determined to be 49.8 °C for the Pow-
erPAK 1212-8, 85 °C for the standard SO-8, 149 °C for
standard TSSOP-8, and 125 °C for TSOP-6. This is a
4.8 °C rise above the board temperature for the Power-
PAK 1212-8, and over 40 °C for other SMT packages. A
4.8 °C rise has minimal effect on r DS(ON) whereas a rise
of over 40 °C will cause an increase in r DS(ON) as high
as 20 %.
Document Number 71681
03-Mar-06
Spreading Copper
Designers add additional copper, spreading copper, to
the drain pad to aid in conducting heat from a device. It
is helpful to have some information about the thermal
performance for a given area of spreading copper.
Figure 5 and Figure 6 show the thermal resistance of a
PowerPAK 1212-8 single and dual devices mounted on
a 2-in. x 2-in., four-layer FR-4 PC boards. The two inter-
nal layers and the backside layer are solid copper. The
internal layers were chosen as solid copper to model the
large power and ground planes common in many appli-
cations. The top layer was cut back to a smaller area and
at each step junction-to-ambient thermal resistance
measurements were taken. The results indicate that an
area above 0.2 to 0.3 square inches of spreading copper
gives no additional thermal performance improvement.
A subsequent experiment was run where the copper on
the back-side was reduced, first to 50 % in stripes to
mimic circuit traces, and then totally removed. No signif-
icant effect was observed.
www.vishay.com
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相关PDF资料 |
PDF描述 |
|---|---|
| SI7129DN-T1-GE3 | MOSFET P-CH D-S 30V 1212-8 |
| SI7135DP-T1-GE3 | MOSFET P-CH 30V 60A PPAK 8SOIC |
| SI7136DP-T1-GE3 | MOSFET N-CH 20V 30A PPAK 8SOIC |
| SI7145DP-T1-GE3 | MOSFET P-CH D-S 30V 8-SOIC |
| SI7148DP-T1-GE3 | MOSFET N-CH D-S 75V PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7129DN-T1-GE3 | 功能描述:MOSFET 30V 35A 52.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7135DP-T1-GE3 | 功能描述:MOSFET 30V 60A 104W 3.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7136DP | 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI7136DP-RC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:R-C Thermal Model Parameters |
| SI7136DP-T1-E3 | 功能描述:MOSFET 20V 30A 39W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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