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| 型号： | SI7123DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 10.2A 1212-8 |
| 产品目录绘图： | DN-T1-E3 Series 1212-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.6 毫欧 @ 15A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 90nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3729pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1664 (CN2011-ZH PDF) |
| 其它名称： | SI7123DN-T1-GE3DKR |
New Product
Si7123DN
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 20
- 19
3
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.4
-1
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 15 A
- 40
0.0086
± 100
-1
- 10
0.0106
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 11.2 A
0.0112
0.0136
Ω
V GS = - 1.8 V, I D = - 5 A
0.0156
0.0189
Forward Transconductance a
g fs
V DS = - 15 V, I D = - 4 A
27
S
Dynamic b
Input Capacitance
C iss
3729
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 10 V, V GS = 0 V, f = 1 MHz
542
475
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 10 V, V GS = - 4.5 V, I D = - 15 A
V DS = - 10 V, V GS = - 2.5 V, I D = - 15 A
57
35.5
4.5
90
55
nC
Gate-Drain Charge
Q gd
16.1
Gate Resistance
Turn-On Delay Time
R g
t d(on)
f = 1 MHz
2.0
25
50
Ω
Rise Time
Turn-Off DelayTime
Fall Time
t r
t d(off)
t f
V DD = - 10 V, R L = 0.77 Ω
I D ? - 13 A, V GEN = - 4.5 V, R g = 1 Ω
88
82
28
150
150
45
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
- 25
- 40
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 13 A
I F = - 13 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.76
48
45
19
29
- 1.2
80
80
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69655
S10-0347-Rev. D, 15-Feb-10
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相关代理商/技术参数 |
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| SI7129DN-T1-GE3 | 功能描述:MOSFET 30V 35A 52.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7135DP-T1-GE3 | 功能描述:MOSFET 30V 60A 104W 3.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7136DP | 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI7136DP-RC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:R-C Thermal Model Parameters |
| SI7136DP-T1-E3 | 功能描述:MOSFET 20V 30A 39W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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