- 您现在的位置：买卖IC网 > Datasheet目录512 > SI7228DN-T1-GE3 (Vishay Siliconix)MOSFET N-CH 30V PWRPAK 1212-8 Datasheet资料下载
参数资料
| 型号： | SI7228DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V PWRPAK 1212-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 26A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 8.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 15V |
| 功率 - 最大： | 23W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 带卷 (TR) |
Si7228DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.020 at V GS = 10 V
0.025 at V GS = 4.5 V
I D (A) f
26
23
Q g (Typ.)
4.1 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK ? 1212- 8
APPLICATIONS
?
?
Synchronous Rectification
Notebook System Power
3.30 mm
1
S1
2
G1
S2
3.30 mm
?
?
POL
Low Current DC/DC
D 1
D 2
D1
3
4
G2
8
7
D1
G 1
G 2
D2
6
5
D2
Bottom V ie w
Orderin g Information: Si722 8 D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
26
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
21
8.8 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
7 a, b
35
19
2.2 a, b
14
9.8
A
mJ
T C = 25 °C
23
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
14.8
2.6 a, b
W
T A = 70 °C
1.7 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, e
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
38
4.3
48
5.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on T C = 25 °C.
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7230DN-T1-GE3 | MOSFET N-CH 30V PWRPAK 1212-8 |
| SI7272DP-T1-GE3 | MOSFET N-CH D-S 30V 8-SOIC |
| SI7326DN-T1-GE3 | MOSFET N-CH 30V PWRPAK 1212-8 |
| SI7328DN-T1-E3 | MOSFET N-CH 30V PWRPAK 1212-8 |
| SI7342DP-T1-GE3 | MOSFET N-CH D-S 30V PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI-7230 | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Bipolar Driver IC |
| SI7230DN-T1-E3 | 功能描述:MOSFET 30V 14A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7230DN-T1-GE3 | 功能描述:MOSFET 30V 14A 3.7W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7230E | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:STEPPING MOTOR DRIVER |
| SI-7230E | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:STEPPING MOTOR DRIVER |
发布紧急采购，3分钟左右您将得到回复。