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| 型号： | SI7390DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
Si7390DP
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0095 at V GS = 10 V
0.0135 at V GS = 4.5 V
I D (A)
15
13
? Halogen-free According to IEC 61249-2-21
Definition
? Extremely Low Qgd for Low Switching Losses
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
APPLICATIONS
? High-Side DC/DC Conversion
- Notebook
6.15 mm
1
S
2
S
3
S
5.15 mm
G
- Server
- Workstation
? Point-of-Load Conversion
D
4
D
8
D
7
6
D
D
G
5
Bottom View
Ordering Information: Si7390DP-T1-E3 (Lead (Pb)-free)
Si7390DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
15
12
± 50
9
7
A
Continuous Source Current (Diode Conduction) a
I S
4.1
1.5
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5
3.2
- 55 to 150
260
1.8
1.1
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET) a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
20
53
2.1
25
70
3.2
°C/W
Notes:
a. Surface mounted on 1” x 1” FR4 board.
b. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72214
S11-0212-Rev. E, 14-Feb-11
www.vishay.com
1
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相关代理商/技术参数 |
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| SI7392ADP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET |
| SI7392ADP-T1-E3 | 功能描述:MOSFET 30V 30A 27.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7392ADP-T1-GE3 | 功能描述:MOSFET 30V 30A 27.5W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7392DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET |
| SI7392DP-T1 | 功能描述:MOSFET 30V 15A 1.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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