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参数资料
| 型号： | SI7403BDN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 20V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 74 毫欧 @ 5.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 430pF @ 10V |
| 功率 - 最大： | 9.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7403BDN-T1-GE3DKR |
Si7403BDN
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.074 at V GS = - 4.5 V
0.110 at V GS = - 2.5 V
I D (A)
- 8 c
- 7.4
Q g (Typ.)
5.6 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET: 2.5 V Rated
? PowerPAK ? Package
- Low Thermal Resistance
- Low 1.07 mm Profile
APPLICATIONS
PowerPAK 1212-8
? Load Switching
? PA Switching
3.30 mm
1
S
S
3.30 mm
S
2
3
S
4
G
8
D
7
D
D
G
6
D
5
Bottom View
Ordering Information: Si7403BDN-T1-E3 (Lead (Pb)-free)
Si7403BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
±8
- 8 c
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current a, b
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 7.2
- 5.1 a, b
- 4.1 a, b
- 20
-8
- 2.6 a, b
9.6
A
Maximum Power Dissipation a, b
T C = 70 °C
T A = 25 °C
P D
6.1
3.1 a, b
W
T A = 70 °C
2 a, b
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
c, d
T J , T stg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73333
S-83051-Rev. B, 29-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7403DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI7403DN-T1 | 功能描述:MOSFET 20V 4.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7404DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7404DN-T1 | 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7404DN-T1-E3 | 功能描述:MOSFET 30V 13.3A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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