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| 型号： | SI8401AB-B-ISR |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 15/34页 |
| 文件大小： | 0K |
| 描述： | ISOL DGTL 2.5KVRMS 2CH 8SOIC |
| 视频文件： | Digital Isolation Overview Digital Isolators vs. Optocouplers |
| 标准包装： | 2,500 |
| 输入 - 1 侧/2 侧： | 2/1 |
| 通道数： | 2 |
| 电源电压： | 3 V ~ 5.5 V |
| 电压 - 隔离： | 2500Vrms |
| 数据速率： | 10Mbps |
| 输出类型： | 开路漏极 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 125°C |
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Si840x
3.4. Input and Output Characteristics for Non-I 2 C Digital Channels
The Si84xx inputs and outputs for unidirectional channels are standard CMOS drivers/receivers. The nominal
output impedance of an isolator driver channel is approximately 85 ? , ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where
transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance
PCB traces. Table 12 details powered and unpowered operation of the Si84xx’s non-I 2 C digital channels.
Table 12. Si84xx Operation Table
V I Input 1,2 VDDI State 1,3,4 VDDO State 1,3,4 V O Output 1,2
Comments
H
L
X 5
P
P
UP
P
P
P
H
L
L 6
Normal operation.
Upon transition of VDDI from unpowered to pow-
ered, V O returns to the same state as V I in less
than 1 μs.
X 5
P
UP
Upon transition of VDDO from unpowered to pow-
Undetermined ered, V O returns to the same state as V I within
1 μs.
Notes:
1. VDDI and VDDO are the input and output power supplies. V I and V O are the respective input and output terminals.
2. X = not applicable; H = Logic High; L = Logic Low.
3. Powered (P) state is defined as 3.0 V < VDD < 5.5 V.
4. Unpowered (UP) state is defined as VDD = 0 V.
5. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
6. For I 2 C channels, the outputs for a given side go to Hi-Z when power is lost on the opposite side.
Rev. 1.6
15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI8401DB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI8401DB-T1 | 功能描述:MOSFET 20V 4.9A 1.47W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E1 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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