参数资料
型号: SI8800EDB-T2-E1
厂商: Vishay Siliconix
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH D-S 20V MICROFOOT
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
开态Rds(最大)@ Id, Vgs @ 25° C: 80 毫欧 @ 1A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 8.3nC @ 8V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: 4-XFBGA,CSPBGA
供应商设备封装: 4-Microfoot
包装: 标准包装
其它名称: SI8800EDB-T2-E1DKR
Si8800EDB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
4x?b
xxx
AA
s
S
D
e
S
G
Mark on Backside of die
D
4 x ? 0.205 to 0.225 Note 4
Solder Mask ~ ? 0.215
2
1
3
4
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ? ? 0.165 mm to ? 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. · ? is location of pin 1.
Dim.
A
A 1
A 2
b
Min.
0.314
0.127
0.187
0.165
Millimeters a
Nom.
0.357
0.157
0.200
0.175
Max.
0.400
0.187
0.213
0.185
Min.
0.0124
0.0050
0.0074
0.0064
Inches
Nom.
0.0141
0.0062
0.0079
0.0068
Max.
0.0157
0.0074
0.0084
0.0072
e
0.400
0.0157
s
D
0.180
0.760
0.200
0.800
0.220
0.840
0.0070
0.0299
0.0078
0.0314
0.0086
0.0330
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66700 .
Document Number: 66700
S12-1620-Rev. C, 09-Jul-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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