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参数资料
| 型号： | SIA511DJ-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 12V PWRPAK SC70-6 |
| 产品目录绘图： | Mosfet SC70-6, SC75-6 Package |
| 特色产品： | Power MOSFETs in PowerPAK? SC-70 Package |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A，4.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 4.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 6V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SC-70-6 双 |
| 供应商设备封装： | PowerPAK? SC-70-6 双 |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SIA511DJ-T1-GE3DKR |
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Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关PDF资料 |
PDF描述 |
|---|---|
| SIA513DJ-T1-GE3 | MOSFET N/P-CH 20V PWRPAK SC70-6 |
| SIA533EDJ-T1-GE3 | MOSFET N/P-CH 12V 4.5A SC70-6 |
| SIA777EDJ-T1-GE3 | MOSFET N/P-CH 20V PPAK SC70-6L |
| SIA811DJ-T1-GE3 | MOSFET P-CH 20V 4.5A SC70-6 |
| SIA814DJ-T1-GE3 | MOSFET N-CH 30V 4.5A SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIA513DJ-T1-E3 | 功能描述:MOSFET 20V 4.5A 6.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIA513DJ-T1-GE3 | 功能描述:MOSFET N/P-Ch MOSFET 20V 60/110mohms@4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIA517DJ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 12-V (D-S) MOSFET |
| SiA517DJ-T1-GE3 | 功能描述:MOSFET 12V 4.5A 6.5W 29/61mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIA519EDJ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
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