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参数资料
| 型号： | SIA533EDJ-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 12V 4.5A SC70-6 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 34 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 420pF @ 6V |
| 功率 - 最大： | 7.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SC-70-6 双 |
| 供应商设备封装： | PowerPAK? SC-70-6 双 |
| 包装： | 标准包装 |
| 其它名称： | SIA533EDJ-T1-GE3DKR |
New Product
SiA533EDJ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic a
V DS = 10 V, V GS = 10 V, I D = 5.9 A
N-Ch
10
15
Total Gate Charge
Q g
V DS = - 10 V, V GS = - 10 V, I D = - 4.7 A
P-Ch
N-Ch
13
5.6
20
8.5
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
N-Channel
V DS = 10 V, V GS = 4.5 V, I D = 5.9 A
P-Channel
V DS = - 10 V, V GS = - 4.5 V, I D = - 4.7 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7.8
0.7
1.3
0.85
2.3
12
nC
Gate Resistance
R g
f = 1 MHz
N-Ch
P-Ch
0.7
1.4
3.5
7
7
14
Ω
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
t d(on)
t r
N-Channel
V DD = 6 V, R L = 1.3 Ω
I D ? 4.8 A, V GEN = 4.5 V, R g = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
10
15
10
15
15
25
15
25
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(off)
t f
t d(on)
t r
t d(off)
t f
P-Channel
V DD = - 6 V, R L = 1.6 Ω
I D ? - 3.7 A, V GEN = - 4.5 V, R g = 1 Ω
N-Channel
V DD = 6 V, R L = 1.3 Ω
I D ? 4.8 A, V GEN = 8 V, R g = 1 Ω
P-Channel
V DD = - 6 V, R L = 1.6 Ω
I D ? - 3.7 A, V GEN = - 8 V, R g = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
25
10
10
5
5
10
10
20
25
10
10
30
40
15
15
10
10
15
15
30
40
15
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
4.5
- 4.5
20
- 15
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 4.8 A, V GS = 0 V
I S = - 3.7 A, V GS = 0 V
N-Channel
I F = 4.4 A, dI/dt = 100 A/μs, T J = 25 °C
P-Channel
I F = - 3.7 A, dI/dt = - 100 A/μs, T J = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.85
- 0.87
10
25
5
10
5.5
17
4.5
8
1.2
- 1.2
20
50
10
20
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
www.vishay.com
3
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