参数资料
型号: SIA811DJ-T1-GE3
厂商: Vishay Siliconix
文件页数: 9/12页
文件大小: 0K
描述: MOSFET P-CH 20V 4.5A SC70-6
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 94 毫欧 @ 2.8A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 13nC @ 8V
输入电容 (Ciss) @ Vds: 355pF @ 10V
功率 - 最大: 6.5W
安装类型: 表面贴装
封装/外壳: PowerPAK? SC-70-6 双
供应商设备封装: PowerPAK? SC-70-6 双
包装: 带卷 (TR)
New Product
SiA811DJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
N otes:
0.1
t 1
0.01
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 8 5 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
1 0
100
1 0 0 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single P u lse
0.1
10 -3
10 -2
10 -1
1
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74460.
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
www.vishay.com
9
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