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| 型号： | SIHP12N60E-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 12A TO220AB |
| 标准包装： | 50 |
| 系列： | E 系列 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 380 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 58nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 937pF @ 100V |
| 功率 - 最大： | 147W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220AB |
| 包装： | 散装 |
SiHP12N60E
www.vishay.com
Peak Dio d e Recovery d V/ d t Test Circuit
Vishay Siliconix
D.U.T.
+
Circuit layout con s ideration s
? Low s tray inductance
? G round plane
? Low leakage inductance
current tran s former
-
+
-
-
+
R g
?
?
?
?
dV/dt controlled by R g
Driver s ame type a s D.U.T.
I S D controlled by duty factor “D”
D.U.T. - device under te s t
+
-
V DD
Driver gate drive
P.W.
Period
D=
P.W.
Period
V GS = 10 V a
D.U.T. l S D waveform
Rever s e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V D S waveform
Diode recovery
Re-applied
dV/dt
V DD
voltage
Inductor current
Body diode forward drop
Ripple ≤ 5 %
I S D
Note
a. V GS = 5 V for logic level device s
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91479 .
S12-0646-Rev. C, 26-Mar-12
6
Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIHP12N60E-GE3 | 功能描述:MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SiHP12N65E-GE3 | 功能描述:MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS RoHS:否 制造商:Vishay / Siliconix 晶体管极性:N-Channel 汲极/源极击穿电压:700 V 闸/源击穿电压:20 V 漏极连续电流:12 A 电阻汲极/源极 RDS（导通）:0.392 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-220AB-3 封装:Bulk |
| SIHP14N50D-E3 | 功能描述:MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP14N50D-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 500V 14A TO-22 制造商:Vishay Siliconix 功能描述:MOSFET, N-CH, 500V, 14A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating ;RoHS Compliant: Yes |
| SIHP15N60E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET |
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