- 您现在的位置：买卖IC网 > Datasheet目录515 > SIHP6N40D-E3 (Vishay Siliconix)MOSFET N-CH 400V 6A TO-220AB Datasheet资料下载
参数资料
| 型号： | SIHP6N40D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 6A TO-220AB |
| 标准包装： | 1,000 |
| 系列： | * |
SiHP6N40D
www.vishay.com
PRODUCT SUMMARY
D Series Power MOSFET
FEATURES
? Optimal Design
Vishay Siliconix
V DS (V) at T J max.
R DS(on) max. at 25 °C ( ? )
Q g max. (nC)
Q gs (nC)
Q gd (nC)
Configuration
TO-220AB
V GS = 10 V
450
18
3
4
Single
D
1.0
- Low Area Specific On-Resistance
- Low Input Capacitance (C iss )
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
? Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R on x Q g
- Fast Switching
G
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
G
D
S
S
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
N-Channel MOSFET
APPLICATIONS
? Consumer Electronics
- Displays (LCD or Plasma TV)
? Server and Telecom Power Supplies
- SMPS
? Industrial
- Welding
- Induction Heating
- Motor Drives
? Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP6N40D-E3
SiHP6N40D-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
SYMBOL
V DS
V GS
LIMIT
400
± 30
30
UNIT
V
Continuous Drain Current (T J = 150 °C)
Current a
Pulsed Drain
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
I DM
6
4
13
A
Linear Derating Factor
0.8
W/°C
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
E AS
P D
T J , T stg
104
104
- 55 to + 150
mJ
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt d
T J = 125 °C
dV/dt
24
0.48
V/ns
Soldering Recommendations (Peak Temperature) for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 2.3 mH, R g = 25 ? , I AS = 9.5 A.
c. 1.6 mm from case.
d. I SD ? I D , starting T J = 25 °C.
300 c
°C
S12-0687-Rev. A, 02-Apr-12
1
Document Number: 91498
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SIHP7N60E-GE3 | MOSFET N CH 600V 7A TO-220AB |
| SIHU3N50D-E3 | MOSFET N-CH 500V 3A TO251 IPAK |
| SIHU5N50D-E3 | MOSFET N-CH 500V 5.3A TO251 IPAK |
| SIJ400DP-T1-GE3 | MOSFET N-CH 30V PPAK SO-8L |
| SIJ458DP-T1-GE3 | MOSFET N-CH 30V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIHP6N40D-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 400V 6A TO-220 制造商:Vishay Siliconix 功能描述:MOSFET, N-CH, 400V, 6A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating ;RoHS Compliant: Yes 制造商:Vishay 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB |
| SiHP6N65E-GE3 | 功能描述:MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压: 漏极连续电流:7 A 电阻汲极/源极 RDS（导通）:0.6 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-220AB 封装:Bulk |
| SIHP7N60E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET |
| SIHP7N60E-E3 | 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP7N60E-GE3 | 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。