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| 型号： | SIHU5N50D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 5.3A TO251 IPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 325pF @ 100V |
| 功率 - 最大： | 104W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | TO-251AA |
| 包装： | 剪切带 (CT) |
| 其它名称： | SIHU5N50D-E3CT |
SiHU5N50D
www.vishay.com
PRODUCT SUMMARY
D Series Power MOSFET
FEATURES
? Optimal Design
Vishay Siliconix
V DS (V) at T J max.
550
- Low Area Specific On-Resistance
R DS(on) max. at 25 °C ( ? )
Q g (max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
20
3
5
Single
1.5
- Low Input Capacitance (C iss )
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
? Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R on x Q g
IPAK
(TO-251)
D
- Fast Switching
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
G
? Consumer Electronics
- Displays (LCD or Plasma TV)
? Server and Telecom Power Supplies
G
D S
S
N-Channel MOSFET
- SMPS
? Industrial
- Welding
- Induction Heating
- Motor Drives
? Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
IPAK (TO-251)
SiHU5N50D-E3
SiHU5N50D-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
SYMBOL
V DS
V GS
LIMIT
500
± 30
30
UNIT
V
Continuous Drain Current (T J = 150 °C)
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
5.3
3.4
A
Pulsed Drain Current a
I DM
10
Linear Derating Factor
0.83
W/°C
Single Pulse Avalanche
Energy b
E AS
23
mJ
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
P D
T J , T stg
104
- 55 to + 150
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt (d)
Soldering Recommendations (Peak Temperature) c
T J = 125 °C
for 10 s
dV/dt
24
0.28
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 2.3 mH, R g = 25 ? , I AS = 4.5 A.
c. 1.6 mm from case.
d. I SD ? I D , starting T J = 25 °C.
S12-0690-Rev. A, 02-Apr-12
1
Document Number: 91492
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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