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| 型号： | SIHU5N50D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 5.3A TO251 IPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 325pF @ 100V |
| 功率 - 最大： | 104W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | TO-251AA |
| 包装： | 剪切带 (CT) |
| 其它名称： | SIHU5N50D-E3CT |
SiHU5N50D
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
62
1.2
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 250 μA
V DS = V GS , I D = 250 μA
V GS = ± 30 V
V DS = 500 V, V GS = 0 V
V DS = 400 V, V GS = 0 V, T J = 125 °C
500
-
3
-
-
-
-
0.58
-
-
-
-
-
-
5
± 100
1
10
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 2.5 A
-
1.2
1.5
?
Forward
Transconductance a
g fs
V DS = 20 V, I D = 2.5 A
-
1.8
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V,
V DS = 100 V,
f = 1 MHz
-
-
-
325
34
6
-
-
-
Effective Output Capacitance, Energy
Related b
Effective Output Capacitance, Time
Related c
Total Gate Charge
C o(er)
C o(tr)
Q g
V DS = 0 V to 400 V, V GS = 0 V
-
-
-
31
41
10
-
-
20
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 2.5 A, V DS = 400 V
-
3
-
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
5
12
-
24
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
t r
t d(off)
t f
R g
V DD = 400 V, I D = 2.5 A
R g = 9.1 ? , V GS = 10 V
f = 1 MHz, open drain
-
-
-
-
11
14
11
1.7
22
28
22
-
ns
?
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I S
I SM
MOSFET symbol
showing the
integral reverse
P - N junction diode
G
D
S
-
-
-
-
5
20
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V SD
t rr
Q rr
I RRM
T J = 25 °C, I S = 4 A, V GS = 0 V
T J = 25 °C, I F = I S = 2.5 A,
dI/dt = 100 A/μs, V R = 20 V
-
-
-
-
-
320
1.2
8
1.2
-
-
-
V
ns
μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C oss(er) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 % to 80 % V DSS .
c. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DSS .
S12-0690-Rev. A, 02-Apr-12
2
Document Number: 91492
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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