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| 型号： | SIHP6N40D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 6A TO-220AB |
| 标准包装： | 1,000 |
| 系列： | * |
SiHP6N40D
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
62
1.2
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 250 μA
V DS = V GS , I D = 250 μA
V GS = ± 30 V
V DS = 400 V, V GS = 0 V
V DS = 320 V, V GS = 0 V, T J = 125 °C
400
-
3
-
-
-
-
0.53
-
-
-
-
-
-
5
± 100
1
10
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 3 A
-
0.85
1.0
?
Forward Transconductance
g fs
V DS = 50 V, I D = 3 A
-
1.7
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V,
V DS = 100 V,
f = 1 MHz
-
-
-
311
38
7
-
-
-
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Total Gate Charge
C o(er)
C o(tr)
Q g
V GS = 0 V,
V DS = 0 V to 320 V
-
-
-
44
54
9
-
-
18
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 3 A, V DS = 320 V
-
3
-
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
4
12
-
24
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
t r
t d(off)
t f
R g
V DD = 400 V, I D = 3 A,
V GS = 10 V, R g = 9.1 ?
f = 1 MHz, open drain
-
-
-
-
11
14
8
1.9
22
28
16
-
ns
?
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
6
24
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V SD
t rr
Q rr
I RRM
T J = 25 °C, I S = 3 A, V GS = 0 V
T J = 25 °C, I F = I S = 3 A,
dI/dt = 100 A/μs, V R = 20 V
-
-
-
-
-
236
1.1
9
1.2
-
-
-
V
ns
μC
A
Notes
a. C oss(er) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 % to 80 % V DS .
b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DS .
S12-0687-Rev. A, 02-Apr-12
2
Document Number: 91498
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIHP6N40D-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 400V 6A TO-220 制造商:Vishay Siliconix 功能描述:MOSFET, N-CH, 400V, 6A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating ;RoHS Compliant: Yes 制造商:Vishay 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB |
| SiHP6N65E-GE3 | 功能描述:MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压: 漏极连续电流:7 A 电阻汲极/源极 RDS（导通）:0.6 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-220AB 封装:Bulk |
| SIHP7N60E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET |
| SIHP7N60E-E3 | 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP7N60E-GE3 | 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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