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| 型号： | SIHP6N40D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 6A TO-220AB |
| 标准包装： | 1,000 |
| 系列： | * |
SiHP6N40D
www.vishay.com
Peak Dio d e Recovery d V/ d t Test Circuit
Vishay Siliconix
D.U.T.
+
Circuit layout con s ideration s
? Low s tray inductance
? G round plane
? Low leakage inductance
current tran s former
-
+
-
-
+
R g
?
?
?
?
dV/dt controlled by R g
Driver s ame type a s D.U.T.
I S D controlled by duty factor “D”
D.U.T. - device under te s t
+
-
V DD
Driver gate drive
P.W.
Period
D=
P.W.
Period
V GS = 10 V a
D.U.T. l S D waveform
Rever s e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V D S waveform
Diode recovery
Re-applied
dV/dt
V DD
voltage
Inductor current
Body diode forward drop
Ripple ≤ 5 %
I S D
Note
a. V GS = 5 V for logic level device s
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91498 .
S12-0687-Rev. A, 02-Apr-12
6
Document Number: 91498
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIHP6N40D-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 400V 6A TO-220 制造商:Vishay Siliconix 功能描述:MOSFET, N-CH, 400V, 6A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating ;RoHS Compliant: Yes 制造商:Vishay 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB |
| SiHP6N65E-GE3 | 功能描述:MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压: 漏极连续电流:7 A 电阻汲极/源极 RDS（导通）:0.6 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-220AB 封装:Bulk |
| SIHP7N60E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET |
| SIHP7N60E-E3 | 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP7N60E-GE3 | 功能描述:MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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