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| 型号： | SIHP7N60E-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 600V 7A TO-220AB |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 680pF @ 100V |
| 功率 - 最大： | 78W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 散装 |
SiHP7N60E
www.vishay.com
E Series Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V) at T J max.
R DS(on) max. at 25 °C ( ? )
Q g max. (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
650
40
5
9
Single
0.6
FEATURES
? Low Figure-of-Merit (FOM) R on x Q g
? Low Input Capacitance (C iss )
? Reduced Switching and Conduction Losses
? Ultra Low Gate Charge (Q g )
? Avalanche Energy Rated (UIS)
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
TO-220AB
D
?
?
Server and Telecom Power Supplies
Switch Mode Power Supplies (SMPS)
G
?
?
Power Factor Correction Power Supplies (PFC)
Lighting
- High-Intensity Discharge (HID)
G
D
S
S
- Fluorescent Ballast Lighting
? Industrial
- Welding
N-Channel MOSFET
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP7N60E-E3
SiHP7N60E-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
T C = - 25 °C, I D = 250 μA
V DS
V GS
600
575
± 20
30
V
Continuous Drain Current (T J = 150 °C)
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
7
5
A
Pulsed Drain Current a
I DM
18
Linear Derating Factor
0.63
W/°C
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
E AS
P D
T J , T stg
43
78
- 55 to + 150
mJ
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature)
T J = 125 °C
for 10 s
dV/dt
37
3
300 c
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 13.8 mH, R g = 25 ? , I AS = 2.5 A.
c. 1.6 mm from case.
d. I SD ? I D , dI/dt = 100 A/μs, starting T J = 25 °C.
S12-3086-Rev. B, 24-Dec-12
1
Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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