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| 型号： | SIHP7N60E-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 600V 7A TO-220AB |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 680pF @ 100V |
| 功率 - 最大： | 78W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 散装 |
SiHP7N60E
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
62
1.6
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 600 V, V GS = 0 V
V DS = 480 V, V GS = 0 V, T J = 125 °C
609
-
2
-
-
-
-
0.68
-
-
-
-
-
-
4
± 100
1
10
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 3.5 A
-
0.5
0.6
?
Forward Transconductance
g fs
V DS = 50 V, I D = 3.5 A
-
1.9
-
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
V GS = 0 V,
V DS = 100 V,
f = 1 MHz
-
-
-
680
39
5
-
-
-
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Total Gate Charge
C o(er)
C o(tr)
Q g
V DS = 0 V to 480 V, V GS = 0 V
-
-
-
34
100
20
-
-
40
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 3.5 A, V DS = 480 V
-
5
-
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
9
13
-
26
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
t r
t d(off)
t f
R g
V DD = 480 V, I D = 3.5 A,
V GS = 10 V, R g = 9.1 ?
f = 1 MHz, open drain
-
-
-
-
13
24
14
1.1
26
48
28
-
ns
?
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I S
I SM
MOSFET symbol
showing the ?
integral reverse ?
p - n junction diode
G
D
S
-
-
-
-
7
18
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V SD
t rr
Q rr
I RRM
T J = 25 °C, I S = 3.5 A, V GS = 0 V
T J = 25 °C, I F = I S = 3.5 A,
dI/dt = 100 A/μs, V R = 20 V
-
-
-
-
-
230
1.9
14
1.2
-
-
-
V
ns
μC
A
Notes
a. C oss(er) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 % to 80 % V DSS .
b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DSS .
S12-3086-Rev. B, 24-Dec-12
2
Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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