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| 型号： | SIHP5N50D-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 5.3A TO220AB |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 325pF @ 100V |
| 功率 - 最大： | 104W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 剪切带 (CT) |
| 其它名称： | SIHP5N50D-E3CT |
SiHP5N50D
www.vishay.com
PRODUCT SUMMARY
D Series Power MOSFET
FEATURES
? Optimal Design
Vishay Siliconix
V DS (V) at T J max.
550
- Low Area Specific On-Resistance
R DS(on) max. at 25 °C ( ? )
Q g (max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
20
3
5
Single
1.5
- Low Input Capacitance (C iss )
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
? Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R on x Q g
TO-220AB
G
D
- Fast Switching
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
? Consumer Electronics
- Displays (LCD or Plasma TV)
G
D
S
S
? Server and Telecom Power Supplies
- SMPS
? Industrial
N-Channel MOSFET
- Welding
- Induction Heating
- Motor Drives
? Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP5N50D-E3
SiHP5N50D-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
SYMBOL
V DS
V GS
LIMIT
500
± 30
30
UNIT
V
Continuous Drain Current (T J = 150 °C)
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
5.3
3.4
A
Pulsed Drain Current a
I DM
10
Linear Derating Factor
0.83
W/°C
Single Pulse Avalanche
Energy b
E AS
23
mJ
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
P D
T J , T stg
104
- 55 to + 150
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt (d)
Soldering Recommendations (Peak Temperature) c
T J = 125 °C
for 10 s
dV/dt
24
0.28
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 2.3 mH, R g = 25 ? , I AS = 4.5 A.
c. 1.6 mm from case.
d. I SD ? I D , starting T J = 25 °C.
S12-0690-Rev. A, 02-Apr-12
1
Document Number: 91489
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| SiHP5N50D-GE3 | 功能描述:MOSFET 500V 5A 1.5Ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP6N40D-E3 | 功能描述:MOSFET 400V 1ohm@10V 6A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIHP6N40D-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 400V 6A TO-220 制造商:Vishay Siliconix 功能描述:MOSFET, N-CH, 400V, 6A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating ;RoHS Compliant: Yes 制造商:Vishay 功能描述:Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB |
| SiHP6N65E-GE3 | 功能描述:MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压: 漏极连续电流:7 A 电阻汲极/源极 RDS（导通）:0.6 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格:Through Hole 封装 / 箱体:TO-220AB 封装:Bulk |
| SIHP7N60E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET |
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