- 您现在的位置：买卖IC网 > Datasheet目录515 > SIR-56ST3FF (Rohm Semiconductor)EMITTER IR 950NM 5MM Datasheet资料下载
参数资料
| 型号： | SIR-56ST3FF |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | EMITTER IR 950NM 5MM |
| 标准包装： | 1,000 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 5.6mW/sr @ 50mA |
| 波长： | 950nm |
| 正向电压： | 1.3V |
| 视角： | 30° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | T 1 3/4 |
| 包装： | 袋 |
| 其它名称： | 511-1364 SIR-56ST3F SIR-56ST3F-ND |
SIR-56ST3F
Sensors
Infrared light emitting diode, top view type
SIR-56ST3F
The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household
remote control devices.
Applications
Dimensions (Unit : mm)
Optical control equipment
Light source for remote control devices
φ 5.0 ± 0.2
Notes:
1. Unspecified tolerance
shall be ± 0.2.
2. Dimension in parenthesis are
show for reference.
Features
1) High efficiency, high output P O = 8.0mW (I F = 50mA).
2) Emission spectrum well suited to silicon detectors.
3) Good current-optical output linearity.
2 ? 0.6
2 ? 0.5
4) Long life, high reliability.
2
1
(2.5)
Absolute maximum ratings (Ta = 25 ° C)
1 Anode
2 Cathode
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I F
V R
P D
I FP ?
Topr
Tstg
Limits
100
5
160
0.5
? 25 to + 85
? 40 to + 85
Unit
mA
V
mW
A
° C
° C
? Pulse width = 0.1msec, duty ratio 1%
Rev.A
1/3
相关PDF资料 |
PDF描述 |
|---|---|
| SIR12-21C/TR8 | LED IR GAA1AS WATER CLR RA SMD |
| SIR158DP-T1-GE3 | MOSFET N-CH D-S 30V 8-SOIC |
| SIR19-21C/TR8 | LED IR GAA1AS WATER CLR FLAT SMD |
| SIR19-315/TR8 | LED IR A1GAAS WATER CLR MINI SMD |
| SIR204-A | LED IR 3MM GAA1AS BLUE RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR640ADP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 40V 1.7MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CHAN 40V SO-8 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 40V 1.7mohm@10V |
| SIR640DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40 V (D-S) MOSFET |
| SIR640DP-T1-GE3 | 功能描述:MOSFET 40V 1.7mOhm@10V 60A N-Ch MV T-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR642DP-T1-GE3 | 功能描述:MOSFET 40V 60A 83W 2.4mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR644DP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 40V 2.7MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CHAN 40V SO-8 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 40V 2.7mohm@10V |
发布紧急采购，3分钟左右您将得到回复。