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参数资料
| 型号： | SIR-56ST3FF |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | EMITTER IR 950NM 5MM |
| 标准包装： | 1,000 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 5.6mW/sr @ 50mA |
| 波长： | 950nm |
| 正向电压： | 1.3V |
| 视角： | 30° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | T 1 3/4 |
| 包装： | 袋 |
| 其它名称： | 511-1364 SIR-56ST3F SIR-56ST3F-ND |
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR640ADP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 40V 1.7MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CHAN 40V SO-8 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 40V 1.7mohm@10V |
| SIR640DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40 V (D-S) MOSFET |
| SIR640DP-T1-GE3 | 功能描述:MOSFET 40V 1.7mOhm@10V 60A N-Ch MV T-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR642DP-T1-GE3 | 功能描述:MOSFET 40V 60A 83W 2.4mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR644DP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 40V 2.7MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CHAN 40V SO-8 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 40V 2.7mohm@10V |
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