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| 型号： | SMFR-29C516ESC |
| 厂商： | TEMIC SEMICONDUCTORS |
| 元件分类： | 算术逻辑单元 |
| 英文描述： | 16-BIT ERROR DETECT AND CORRECT CKT, QFP100 |
| 封装： | MQFP-100 |
| 文件页数： | 15/42页 |
| 文件大小： | 809K |
| 代理商： | SMFR-29C516ESC |
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The Total Dose Radiation Level designator shall be added for those devices for which a letter
sample has been successfully tested to the level in question .
For these devices a code shall be
added in accordance with the requirements of ESA/SCC basic specification N° 22900 .
4.5.4
Traceability Information
Each component shall be marked in respect of traceability information in accordance with
ESA / SCC Basic Specification N° 21700.
4.6
ELECTRICAL MEASUREMENTS
4.6.1
Electrical Measurements at Room Temperature
The parameters to be measured with respect of electrical characteristics are scheduled in Table
2. Unless otherwise specified, the measurements
shall be performed at
T
amb = +22 +3°C
4.6.2
Electrical Measurements at High and Low Temperature
s
The parameters to be measured at high and low temperature are scheduled in Table 3. The
measurements shall be performed atTamb = + 125 (+0/-5)° C and -55 (+5/-0)° C respectively.
4.6.3
Circuits for Electrical Measurements
Circuits for use in performing electrical measurements listed in Table 2 and 3 of this
specification are shown in Figure 4.
4.7
BURN-IN TESTS
4.7.1
Parameter Drift Values
The parameter drift values applicable to burn-in are specified in Table 4 of this specification
.
Unless otherwise stated, measurements shall be performed at + 22
+ 3 ° C. The parameter drift
values (
), applicable to the parameters scheduled, shall not be exceeded.
In addition to these drift value requirements, the appropriate limit value specified for a given
parameterin Table 2 shall not be exceeded.
4.7.2
Conditions for Power Burn-in
The requirements for power burn-in are specified in Section 7 of ESA/SCC Generic
Specification N° 9000. The conditions for power burn-in shall be as specified in Table 5 of this
specification.
4.7.3
Electrical Circuits for Power Burn-in
Circuits for use in performing the power burn-in tests are shown in Figure 5 of this specification.
Document number
MHS/SCC 021
Date
Issue
Page
23/12/1999
Rev C
22
Rev C
22 /42
TEMI C
Semiconductors
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