- 您现在的位置：买卖IC网 > Datasheet目录518 > SQM85N03-06P-GE3 (Vishay Siliconix)MOSFET N-CH D-S 30V TO263 Datasheet资料下载
参数资料
| 型号： | SQM85N03-06P-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V TO263 |
| 标准包装： | 800 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4120pF @ 15V |
| 功率 - 最大： | 100W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 带卷 (TR) |
SQM85N03-06P
www.vishay.com
SPECIFICATIONS (T C = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V GS = 0 V
V DS = 30 V
30
1.5
-
-
-
2.0
-
-
-
2.5
± 100
1
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 30 V, T J = 125 °C
-
-
50
μA
V GS = 0 V
V DS = 30 V, T J = 175 °C
-
-
150
On-State Drain Current a
I D(on)
V GS = 10 V
V DS ??? 5 V
120
-
-
A
V GS = 10 V
I D = 20 A
-
0.0053
0.0060
Drain-Source On-State Resistance a
R DS(on)
V GS = 10 V
V GS = 10 V
I D = 20 A, T J = 125 °C
I D = 20 A, T J = 175 °C
-
-
-
-
0.0091
0.0110
?
V GS = 4.5 V
I D = 20 A
-
0.0072
0.0085
Forward
Transconductance b
g fs
V DS = 15 V, I D = 20 A
-
75
-
S
Dynamic b
Input Capacitance
C iss
-
3294
4120
Output Capacitance
C oss
V GS = 0 V
V DS = 15 V, f = 1 MHz
-
655
820
pF
Reverse Transfer Capacitance
Total Gate Charge c
C rss
Q g
-
-
351
47
440
70
Gate-Source Charge c
Q gs
V GS = 10 V
V DS = 15 V, I D = 50 A
-
7.9
-
nC
Gate-Drain Charge c
Q gd
-
8.2
-
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 15 V, R L = 0.3 ?
I D ? 50 A, V GEN = 10 V, R g = 1 ?
0.5
-
-
-
-
1.6
10
7
32
6
2.8
15
11
48
9
?
ns
Source-Drain Diode Ratings and
Characteristics b
Pulsed Current a
I SM
-
-
240
A
Forward Voltage
V SD
I F = 30 A, V GS = 0 V
-
0.85
1.5
V
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2028-Rev. C, 17-Oct-11
2
Document Number: 69077
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SQR50N03-06P-GE3 | MOSFET N-CH D-S 30V TO263 |
| SQS400EN-T1-GE3 | MOSFET N-CH 40V 16A TO263 |
| SQS401EN-T1-GE3 | MOSFET P-CH D-S 40V PPAK 1212-8 |
| SSA-LXB102GD | LED ARRAY 3MM 10SEG FLAT TOP GRN |
| SSA-LXB102ID | LED ARRAY 3MM 10SEG FLAT TOP RED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SQM85N10-10-GE3 | 功能描述:MOSFET 100V 85A 250W 10.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SQM85N15 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 150 V (D-S) 175 ?°C MOSFET |
| SQM85N15-19-GE3 | 功能描述:MOSFET 150V 85A 375W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SQM85N19 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 150 V (D-S) 175 ?°C MOSFET |
| SQM-N75LP/128 | 制造商:STEC Inc 功能描述:SEE AMC16V64T8SEGA - Bulk |
发布紧急采购，3分钟左右您将得到回复。