参数资料
型号: SQM85N03-06P-GE3
厂商: Vishay Siliconix
文件页数: 6/7页
文件大小: 0K
描述: MOSFET N-CH D-S 30V TO263
标准包装: 800
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 6 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 70nC @ 10V
输入电容 (Ciss) @ Vds: 4120pF @ 15V
功率 - 最大: 100W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263(D2Pak)
包装: 带卷 (TR)
SQM85N03-06P
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
2
D u ty Cycle = 0.5
1
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
Vishay Siliconix
10 -4
10 -3
10 -2
10 -1
1
10
Sq u are Wave P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
? The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69077 .
S11-2028-Rev. C, 17-Oct-11
6
Document Number: 69077
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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