- 您现在的位置：买卖IC网 > Datasheet目录526 > SST12LF01-QDF (Microchip Technology)IC FRONT-END MODULE 24WQFN Datasheet资料下载
参数资料
| 型号： | SST12LF01-QDF |
| 厂商： | Microchip Technology |
| 文件页数： | 2/21页 |
| 文件大小： | 0K |
| 描述： | IC FRONT-END MODULE 24WQFN |
| 标准包装： | 3,000 |
| RF 型： | Bluetooth，WLAN |
| 频率： | 2.4GHz |
| 封装/外壳： | 12-WFQFN 裸露焊盘 |
| 供应商设备封装： | 24-WQFN（4x4） |
| 包装： | 带卷 (TR) |
2.4 GHz Front-End Module
A Microchip Technology Company
SST12LF01
Data Sheet
Product Description
The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-performance Low-Noise
Amplifier (LNA) and a Power Amplifier (PA).
Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT tech-
nology, the SST12LF01 operates within the frequency range of 2.4–2.55 GHz at a very low DC-current
consumption. There are two components to the FEM: the Receiver (RX) chain and the Transmitter
(TX) chain.
The RX chain consist of a cost effective Low-Noise Amplifier (LNA) cell which requires no external RF-
matching components. This device is based on the 0.5m GaAs PHEMT technology, and complies with
802.11 b/g/n applications.
The LNA provides high-performance, low-noise, and moderate gain operation within the 2.4–2.55 GHz
frequency band. Across this frequency band, the LNA typically provides 12 dB gain and 1.45 dB noise
figure.
This LNA cell is designed with a self DC-biasing scheme, which maintains low DC current consump-
tion, nominally at 11 mA, during operation. Optimum performance is achieved with only a single power
supply and no external bias resistors or networks are required. The input and output ports are singled-
ended 50 Ohm matched. RF ports are also DC isolated requiring no dc blocking capacitors or match-
ing components to reduce system board Bill of Materials (BOM) cost.
The TX chain includes a high-efficiency PA based on InGaP/GaAs HBT technology. The PA typically
provides 30 dB gain with 22% power-added efficiency at P OUT = 22 dBm for 802.11g and 27% power-
added efficiency at P OUT = 24 dBm for 802.11b.
The Transmitter chain has excellent linearity, typically <4% added EVM up to 20 dBm output power,
which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm.
The SST12LF01 is offered in 24-contact WQFN package. See Figure 2 for pin assignments and Table 1
for pin descriptions.
?2011 Silicon Storage Technology, Inc.
2
DS75040A
12/11
相关PDF资料 |
PDF描述 |
|---|---|
| SST12LF03-Q3DE | IC MOD FEM 11B/G/N BT 20-UQFN |
| SST12LN01-QU6F | IC AMP 2.4/2.5GHZ LN 6UQFN |
| SST12LP15-QVCE | IC AMP 2.4GHZ 16VQFN |
| SST12LP15B-QVCE | IC RF PWR AMP 802.11B/G/N 16VQFN |
| SST13LP05-MLCF | IC RF PWR AMP 802.11A/B/G LGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST12LF02 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones |
| SST12LF02-QXCE | 功能描述:功率放大器 WLAN 11b/g/n FEM PA+SP3T RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
| SST12LF03 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2.4 GHz 高增益及高效率前端模块 |
| SST12LF03-Q3DE | 功能描述:射频前端 WLAN 11B/G/N FEM PA+LNA+SPDT RoHS:否 制造商:Skyworks Solutions, Inc. 类型: 工作频率:2.4 GHz, 5 GHz 最大数据速率:54 Mbps 噪声系数: 工作电源电压:3.3 V 电源电流:180 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-32 |
| SST12LF05-Q4CE | 功能描述:功率放大器 WLAN 11b/g/n FEM PA+SP2T+Filter+Balun RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
发布紧急采购，3分钟左右您将得到回复。