- 您现在的位置：买卖IC网 > PDF目录297473 > SST32HF1621C-90-4C-LS (SILICON STORAGE TECHNOLOGY INC) SPECIALTY MEMORY CIRCUIT, PBGA62 PDF资料下载
参数资料
| 型号： | SST32HF1621C-90-4C-LS |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA62 |
| 封装： | 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-62 |
| 文件页数： | 1/37页 |
| 文件大小： | 451K |
| 代理商： | SST32HF1621C-90-4C-LS |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
2004 Silicon Storage Technology, Inc.
S71236-02-000
6/04
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
ComboMemories organized as:
– SST32HF1621C: 1M x16 Flash + 128K x16 SRAM
– SST32HF1641x: 1M x16 Flash + 256K x16 SRAM
– SST32HF1681: 1M x16 Flash + 256K x16 SRAM
– SST32HF3241x: 2M x16 Flash + 256K x16 SRAM
– SST32HF3281: 2M x16 Flash + 512K x16 SRAM
– SST32HF6481: 4M x16 Flash + 512K x16 SRAM
Single 2.7-3.3V Read and Write Operations
Concurrent Operation
– Read from or Write to SRAM while
Erase/Program Flash
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current:
- SST32HFx1: 60 A (typical)
- SST32HFx1C: 12 A (typical)
Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
Erase-Suspend/Erase-Resume Capabilities
Security-ID Feature
– SST: 128 bits; User: 128 bits
Hardware Block-Protection/WP# Input Pin
– Bottom Block-Protection (bottom 32 KWord)
Fast Read Access Times:
– Flash: 70 ns and 90 ns
– SRAM: 70 ns and 90 ns
Latched Address and Data for Flash
Flash Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 s (typical)
Flash Automatic Erase and Program Timing
– Internal VPP Generation
Flash End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard Command Set
Package Available
– 63-ball LFBGA (8mm x 10mm x 1.4mm)
– 62-ball LFBGA (8mm x 10mm x 1.4mm)
– 64-ball LFBGA (8mm x 10mm x 1.4mm)
PRODUCT DESCRIPTION
The SST32HFx1/x1C ComboMemory devices integrate
a CMOS flash memory bank with a CMOS SRAM mem-
ory bank in a Multi-Chip Package (MCP), manufactured
with SST’s proprietary, high performance SuperFlash
technology. The SST32HF16x1/32x1/6481 devices use a
PseudoSRAM. The SST32HF16x1C/32x1C devices use
standard SRAM.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
7 sec. To protect against inadvertent flash write, the
SST32HFx1/x1C devices contain on-chip hardware and
software data protection schemes. The SST32HFx1/x1C
devices offer a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST32HFx1/x1C devices consist of two independent
memory banks with respective bank enable signals. The
Flash and SRAM memory banks are superimposed in the
same memory address space. Both memory banks share
common address lines, data lines, WE# and OE#. The
memory bank selection is done by memory bank enable
signals. The SRAM bank enable signal, BES# selects the
SRAM bank. The flash memory bank enable signal, BEF#
selects the flash memory bank. The WE# signal has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The SDP command
sequence protects the data stored in the flash memory
bank from accidental alteration.
The SST32HFx1/x1C provide the added functionality of
being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled Erase or Pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for Read or Write.
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 / SST32HF6481
SST32HF1621C / SST32HF1641C / SST32HF3241C
SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM
(x16) MCP ComboMemories
相关PDF资料 |
PDF描述 |
|---|---|
| SST34HF1602C-70-4C-B1P | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| SST42AAA | LATCHING INTERVAL-DELAY RELAY, DPDT, LATCHED, 120VDC (COIL), 3000mW (COIL), 0.1-10s, SOCKET MOUNT |
| SST42ADA | LATCHING INTERVAL-DELAY RELAY, DPDT, LATCHED, 120VDC (COIL), 3000mW (COIL), 1.8-180s, SOCKET MOUNT |
| SST42AEA | LATCHING INTERVAL-DELAY RELAY, DPDT, LATCHED, 120VDC (COIL), 3000mW (COIL), 3-300s, SOCKET MOUNT |
| SST42AGA | LATCHING INTERVAL-DELAY RELAY, DPDT, LATCHED, 120VDC (COIL), 3000mW (COIL), 18-1800s, SOCKET MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST32HF1622C | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1622C-70-4C-LFS | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1622C-70-4C-LFSE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1622C-70-4C-LS | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1622C-70-4C-LSE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
发布紧急采购，3分钟左右您将得到回复。