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参数资料
型号： SST32HF1621C-90-4C-LS
厂商： SILICON STORAGE TECHNOLOGY INC
元件分类： 存储器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA62
封装： 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-62
文件页数： 4/37页
文件大小： 451K
代理商： SST32HF1621C-90-4C-LS
12
Preliminary Specifications
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 / SST32HF6481
SST32HF1621C / SST32HF1641C / SST32HF3241C
2004 Silicon Storage Technology, Inc.
S71236-02-000
6/04
TABLE
6: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Symbol
Parameter
Limits
Test Conditions
Min
Max
Units
IDD
Active VDD Current
Address input = VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max, all DQs open
Read
OE#=VIL, WE#=VIH
Flash
18
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL
SRAM
30
mA
BEF#=VIH, BES1#=VIL , BES2=VIH
Concurrent Operation
40
mA
BEF#=VIH, BES1#=VIL , BES2=VIH
Write1
WE#=VIL
Flash
35
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
SRAM
30
mA
BEF#=VIH, BES1#=VIL , BES2=VIH
ISB
Standby VDD Current SST32HFx1
SST32HFx1C
110
30
A
VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
IRT
Reset
VDD Current
30
A
Reset=VSS±0.3V
ILI
Input Leakage Current
1
A
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10
A
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V
VDD=VDD Min
VILC
Input Low Voltage (CMOS)
0.3
V
VDD=VDD Max
VIH
Input High Voltage
0.7
VDD
VVDD=VDD Max
VIHC
Input High Voltage (CMOS)
VDD-0.3
V
VDD=VDD Max
VOLF
Flash Output Low Voltage
0.2
V
IOL=100 A, VDD=VDD Min
VOHF
Flash Output High Voltage
VDD-0.2
V
IOH=-100 A, VDD=VDD Min
VOLS
SRAM Output Low Voltage
0.4
V
IOL =1 mA, VDD=VDD Min
VOHS
SRAM Output High Voltage
2.2
V
IOH =-500 A, VDD=VDD Min
T6.0 1236
1. IDD active while Erase or Program is in progress.
TABLE
7: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Power-up to Read Operation
100
s
TPU-WRITE1
Power-up to Program/Erase Operation
100
s
T7.0 1236
TABLE
8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
12 pF
T8.0 1236
TABLE
9: FLASH RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Endurance
10,000
Cycles
JEDEC Standard A117
TDR1
Data Retention
100
Years
JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA
JEDEC Standard 78
T9.0 1236
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SST32HF1622C-70-4C-LSE 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory
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