参数资料
型号: SST32HF1621C-90-4C-LS
厂商: SILICON STORAGE TECHNOLOGY INC
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA62
封装: 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-62
文件页数: 6/37页
文件大小: 451K
代理商: SST32HF1621C-90-4C-LS
14
Preliminary Specifications
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 / SST32HF6481
SST32HF1621C / SST32HF1641C / SST32HF3241C
2004 Silicon Storage Technology, Inc.
S71236-02-000
6/04
TABLE 12: FLASH READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
Symbol
Parameter
SST32HFx1/x1C-70
SST32HFx1/x1C-90
Units
Min
Max
Min
Max
TRC
Read Cycle Time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
35
45
ns
TCLZ1
BEF# Low to Active Output
0
ns
TOLZ1
OE# Low to Active Output
0
ns
TCHZ1
BEF# High to High-Z Output
20
30
ns
TOHZ1
OE# High to High-Z Output
20
30
ns
Output Hold from Address Change
0
ns
RST# Pulse Width
500
ns
RST# High before Read
50
ns
TRY1,2
RST# Pin Low to Read Mode
20
s
T12.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
TABLE 13: FLASH PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TBP
Word-Program Time
10
s
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and BEF# Setup Time
0
ns
TCH
WE# and BEF# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
BEF# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
WE# Pulse Width High
30
ns
TCPH1
BEF# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TBE
Block-Erase
25
ms
TSCE
Chip-Erase
50
ms
T13.2 1236
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