参数资料
型号: SSTUAF32869AHLFT
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: 锁存器
英文描述: 32869 SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA150
封装: LEAD FREE, BGA-150
文件页数: 20/20页
文件大小: 452K
代理商: SSTUAF32869AHLFT
ICSSSTUAF32869A
14-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
COMMERCIAL TEMPERATURE GRADE
14-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
9
ICSSSTUAF32869A
7095/14
Absolute Maximum Ratings
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Mode Select
Output Buffer Characteristics
Output edge rates over recommended operating free-air temperature range
Item
Rating
Supply Voltage, VDD
-0.5V to 2.5V
Input Voltage Range, VI1
1
The input and output negative voltage ratings may be exceeded if the ratings of the I/P and
O/P clamp current are observed.
-0.5V to VDD + 2.5V
Output Voltage Range, VO1,2
2
This current will flow only when the output is in the high state level VO > VDDQ.
-0.5V to VDDQ + 0.5V
Input Clamp Current, IIK
±50mA
Output Clamp Current, IOK
±50mA
Continuous Output Clamp Current, IO
±50mA
Continuous Current through each VDD or GND
±100mA
Package Thermal Impedance (
θja)3
3
The package thermal impedance is calculated in accordance with JESD 51.
0m/s Airflow
40
° C/W
1m/s Airflow
29
° C/W
Storage Temperature
-65 to +150
° C
C1
Device Mode
0
First device in pair, Front
1
Second device in pair, Back
Parameter
VDD = 1.8V ± 0.1V
Units
Min.
Max.
dV/dt_r
1
4
V/ns
dV/dt_f
1
4
V/ns
dV/dt_
1
1
Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate).
1V/ns
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