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参数资料
| 型号： | ST10F273M-4QR3 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144 |
| 封装： | 28 X 28 MM, 3.40 MM HEIGHT, 0.65 MM PITCH, PLASTIC, QFP-144 |
| 文件页数： | 14/182页 |
| 文件大小： | 3222K |
| 代理商： | ST10F273M-4QR3 |
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Power reduction modes
ST10F273M
110/182
In normal running mode (that is, when main VDD is on) the VSTBY pin can be tied to VSS
during reset to exercise the EA functionality associated with the same pin: The voltage
supply for the circuitries which are usually biased with VSTBY (see in particular the 32 kHz
oscillator used in conjunction with Real Time Clock module), is granted by the active main
VDD.
It must be noted that Standby mode can generate problems associated with the usage of
different power supplies in CMOS systems; particular attention must be paid when the
ST10F273M I/O lines are interfaced with other external CMOS integrated circuits: If VDD of
ST10F273M becomes (for example, in Standby mode) lower than the output level forced by
the I/O lines of these external integrated circuits, the ST10F273M could be directly powered
through the inherent diode existing on ST10F273M output driver circuitry. The same is valid
for ST10F273M interfaced to active/inactive communication buses during Standby mode:
Current injection can be generated through the inherent diode.
Furthermore, the sequence of turning on/off of the different voltage could be critical for the
system (not only for the ST10F273M device). The device Standby mode current (ISTBY) may
vary while VDD to VSTBY (and vice versa) transition occurs: Some current flows between
VDD and VSTBY pins. System noise on both VDD and VSTBY can contribute to increase this
phenomenon.
21.3.1
Entering standby mode
As already stated, to enter Standby mode the XRAM2EN bit in the XPERCON register must
be cleared: This allows the RAM interface to be frozen immediately, avoiding any data
corruption. As a consequence of a RESET event, the RAM power supply is switched to the
internal low-voltage supply V18SB (derived from VSTBY through the low-power voltage
regulator). The RAM interface remains frozen until the bit XRAM2EN is set again by
software initialization routine (at next exit from main VDD power-on reset sequence).
Since V18 is falling down (as a consequence of VDD turning off), it can happen that the
XRAM2EN bit is no longer able to guarantee its content (logic “0”), being the XPERCON
Register powered by internal V18. This does not generate any problem, because the
Standby mode switching dedicated circuit continues to confirm the RAM interface freezing,
irrespective the XRAM2EN bit content; XRAM2EN bit status is considered again when
internal V18 comes back over internal standby reference V18SB.
If internal V18 becomes lower than internal standby reference (V18SB) of about 0.3 to 0.45V
with bit XRAM2EN set, the RAM Supply switching circuit is not active: in case of a
temporary drop on internal V18 voltage versus internal V18SB during normal code execution,
no spurious Standby mode switching can occur (the RAM is not frozen and can still be
accessed).
The ST10F273M Core module, generating the RAM control signals, is powered by internal
V18 supply; during turning off transient these control signals follow the V18, while RAM is
switched to V18SB internal reference. It could happen that a high level of RAM write strobe
from ST10F273M Core (active low signal) is low enough to be recognized as a logic “0” by
the RAM interface (due to V18 lower than V18SB): The bus status could contain a valid
address for the RAM and an unwanted data corruption could occur. For this reason, an extra
interface, powered by the switched supply, is used to prevent the RAM from this kind of
potential corruption mechanism.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST10F273M-4T3 | 功能描述:16位微控制器 - MCU 16-bit MCU 512 Kbyte Flash memory 36 Kbyt RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F273M-4TR3 | 功能描述:16位微控制器 - MCU 16-bit MCU 512 Kbyte Flash memory 36 Kbyt RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F273Z4Q3 | 功能描述:16位微控制器 - MCU 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F273Z4T3 | 功能描述:16位微控制器 - MCU 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F274Z2T7 | 制造商:STMicroelectronics 功能描述:832K FLASH PQFP 144 - Trays |
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