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参数资料
| 型号： | ST52T301P |
| 厂商： | 意法半导体 |
| 英文描述： | 8-Bit OTP/EPROM DuaLogic] MCUs WITH ADC, UART, TIMER, TRIAC & PWM DRIVER |
| 中文描述： | 8位检察官办公室/存储器DuaLogic]与艺术发展局和UART，定时器，可控硅控制器 |
| 文件页数： | 22/100页 |
| 文件大小： | 497K |
| 代理商： | ST52T301P |
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at least 2
μ
s before updating the data and the
address.
The data updating for the next programming is
performed, directly by the user, on the data bus
P(0:7) while the address is incremented through
the pin CADD.
3.1.2EPROMVerify
A Verify mode is available in order to verify the
correctness of the data written. It is possible to
activate the Verify mode immediately after the
writing of each byte:
CE = HIGH
OE= LOW
Then, if any error in writing occured, the user has
to repeatthe EPROMwriting.
The data, during this phase, are avalaible on the
bus P(0:7)
3.1.3WritingInhibit
It occursbetween the Writing and VerifyMode:
CE = HIGH
OE= HIGH
3.1.4 Standby Mode
The EPROM has a standby mode which reduces
theactivecurrentfrom10mA(Programmingmode)
to less than 100
μ
A. The Memory is placed in
standbymode by setting CE at HIGH Logic Level
(V
PP
might be equal to 5 V too).When in standby
mode,the outputsare in high impedance state.
3.2 Eprom Erasure
Thanks to the transparent window present in the
CLCC44-W package,its memory contentsmaybe
erasedby exposureto UV light.
Erasurebeginswhenthedeviceisexposedto light
witha wavelengthshorter than4000.It shouldbe
noted that sunlight, as well as some types of
artificial light, includes wavelengths in the
3000-4000rangewhich, on prolongedexposure,
can cause erasure of memory contents.It is thus
recommended that EPROM devices be fitted with
an opaque label over the window area in order to
prevent unintentionalerasure.
The recommended erasureprocedureforEPROM
devicesconsistsof exposureto shortwaveUV light
having a wavelength of 2537. The minimum
recommended integrated dose (intensity x
expo-sure time) for complete erasure is
15Wsec/cm2 .
This is equivalent to an erasure time of 15-20
minutes using a UV source having an intensity of
12mW/cm 2 at a distance of 25mm (1 inch) from
the device window.
OE
P(0:7)
DATA IN
VPP
5V
12V
CE
Inhibit
min 2us
2us typ.
DATA OUT
RESET
CADD
Writing
Verify
ERES
INPUT
PORT
50us typ.
OUTPUT
PORT
3us min.
Figure3.2.EPROM Programming Timing
22/99
ST52T301/E301
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