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参数资料
型号： ST72C171K2B6
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP32
封装： SHRINK, PLASTIC, DIP-32
文件页数： 47/152页
文件大小： 2156K
代理商： ST72C171K2B6
ST72C171
140/152
8-BIT ADC CHARACTERISTICS (Cont’d)
ADC Accuracy
Figure 98. ADC Accuracy Characteristics
Notes:
1. ADC Accuracy vs. Negative Injection Current:
For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6A and the effect on the ADC accuracy is a loss of 1 LSB
for each 10K
increase of the external analog source impedance. This effect on the ADC accuracy has been observed
under worst-case conditions for injection:
- negative injection
- injection to an Input with analog capability, adjacent to the enabled Analog Input
- at 5V VDD supply, and worst case temperature.
3. Data based on characterization results over the whole temperature range, monitored in production.
Symbol
Parameter
Conditions
Min
Max
Unit
|ET|
Total unadjusted error 1)
VDD=5.0V,
3)
fCPU=8MHz
1
LSB
EO
Offset error 1)
-0.5
0.5
EG
Gain Error 1)
-0.5
0.5
|ED|
Differential linearity error 1)
0.5
|EL|
Integral linearity error 1)
0.5
EO
EG
1LSBIDEAL
1LSB
IDEAL
V
DDA
V
SSA
–
256
-----------------------------------------
=
Vin (LSBIDEAL)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
Digital Result ADCDR
255
254
253
5
4
3
2
1
0
7
6
1
2
3
456
7
253 254 255 256
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
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相关代理商/技术参数
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