参数资料
型号: STM32F103VBT6TR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 1.25 MHz, RISC MICROCONTROLLER, PQFP100
封装: 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数: 30/92页
文件大小: 1212K
代理商: STM32F103VBT6TR
Electrical characteristics
STM32F103x8, STM32F103xB
Doc ID 13587 Rev 11
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 10.
Operating conditions at power-up / power-down
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 11 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
PD
Power dissipation at TA = 85 °C
for suffix 6 or TA = 105 °C for
suffix 7(3)
LFBGA100
454
mW
LQFP100
434
TFBGA64
308
LQFP64
444
LQFP48
363
VFQFPN36
1110
TA
Ambient temperature for 6
suffix version
Maximum power dissipation
–40
85
°C
Low power dissipation(4)
–40
105
Ambient temperature for 7
suffix version
Maximum power dissipation
–40
105
°C
Low power dissipation(4)
–40
125
TJ
Junction temperature range
6 suffix version
–40
105
°C
7 suffix version
–40
125
1.
When the ADC is used, refer to Table 45: ADC characteristics.
2.
It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3.
If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
4.
In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 9.
General operating conditions (continued)
Symbol
Parameter
Conditions
Min
Max
Unit
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
0
s/V
VDD fall time rate
20
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