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参数资料
型号： STM32F103VBT6TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 1.25 MHz, RISC MICROCONTROLLER, PQFP100
封装： 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数： 91/92页
文件大小： 1212K
代理商： STM32F103VBT6TR
STM32F103x8, STM32F103xB
Revision history
Doc ID 13587 Rev 11
91/92
23-Apr-2009
10
I/O information clarified on page 1.
Figure 3: STM32F103xx performance line LFBGA100 ballout modified.
Figure 9: Memory map modified. Table 4: Timer feature comparison
added.
PB4, PB13, PB14, PB15, PB3/TRACESWO moved from Default
column to Remap column in Table 5: Medium-density STM32F103xx
pin definitions.
PD for LFBGA100 corrected in Table 9: General operating conditions.
Note modified in Table 13: Maximum current consumption in Run
mode, code with data processing running from Flash and Table 15:
Maximum current consumption in Sleep mode, code running from
Flash or RAM.
Table 20: High-speed external user clock characteristics and Table 21:
Low-speed external user clock characteristics modified.
Figure 18 shows a typical curve (title modified). ACCHSI max values
modified in Table 24: HSI oscillator characteristics.
TFBGA64 package added (see Table 54 and Table 43). Small text
changes.
22-Sep-2009
11
Note 5 updated and Note 4 added in Table 5: Medium-density
STM32F103xx pin definitions.
VRERINT and TCoeff added to Table 12: Embedded internal reference
voltage. IDD_VBAT value added to Table 16: Typical and maximum
current consumptions in Stop and Standby modes. Figure 16: Typical
current consumption on VBAT with RTC on versus temperature at
different VBAT values added.
fHSE_ext min modified in Table 20: High-speed external user clock
characteristics.
CL1 and CL2 replaced by C in Table 22: HSE 4-16 MHz oscillator
characteristics and Table 23: LSE oscillator characteristics (fLSE =
32.768 kHz), notes modified and moved below the tables. Table 24: HSI
oscillator characteristics modified. Conditions removed from Table 26:
Low-power mode wakeup timings.
Note 1 modified below Figure 22: Typical application with an 8 MHz
crystal.
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to
IEC 61967-2 in Section 5.3.10: EMC characteristics on page 54.
Jitter added to Table 27: PLL characteristics.
Table 41: SPI characteristics modified.
CADC and RAIN parameters modified in Table 45: ADC characteristics.
RAIN max values modified in Table 46: RAIN max for fADC = 14 MHz.
Figure 37: LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array
package outline updated.
Table 58.
Document revision history (continued)
Date
Revision
Changes
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相关代理商/技术参数
参数描述
STM32F103VBT6XXX 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
STM32F103VBT7 功能描述:ARM微控制器 - MCU 32BIT Cortex M3 M/D Performance LINE RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F103VBT7TR 功能描述:ARM微控制器 - MCU 32-Bit ARM Cortex MED Density 128kb PL RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F103VBT7XXX 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
STM32F103VBU6TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
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