参数资料
型号: STM32F103VBT6TR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 1.25 MHz, RISC MICROCONTROLLER, PQFP100
封装: 14 X 14 MM, ROHS COMPLIANT, LQFP-100
文件页数: 66/92页
文件大小: 1212K
代理商: STM32F103VBT6TR
STM32F103x8, STM32F103xB
Electrical characteristics
Doc ID 13587 Rev 11
Equation 1: RAIN max formula:
The formula above (Equation 1) is used to determine the maximum external impedance allowed for an
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 46.
RAIN max for fADC = 14 MHz
(1)
1.
Based on characterization, not tested in production.
Ts (cycles)
tS (s)
RAIN max (k)
1.5
0.11
0.4
7.5
0.54
5.9
13.5
0.96
11.4
28.5
2.04
25.2
41.5
2.96
37.2
55.5
3.96
50
71.5
5.11
NA
239.5
17.1
NA
Table 47.
ADC accuracy - limited test conditions(1) (2)
1.
ADC DC accuracy values are measured after internal calibration.
2.
ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
Symbol
Parameter
Test conditions
Typ
Max(3)
3.
Based on characterization, not tested in production.
Unit
ET
Total unadjusted error
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k,
VDDA = 3 V to 3.6 V
TA = 25 °C
Measurements made after
ADC calibration
±1.3
±2
LSB
EO
Offset error
±1
±1.5
EG
Gain error
±0.5
±1.5
ED
Differential linearity error
±0.7
±1
EL
Integral linearity error
±0.8
±1.5
R
AIN
T
S
f
ADC
C
ADC
2
N2
+
ln
--------------------------------------------------------------
R
ADC
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