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参数资料
| 型号： | STP5NB100 |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -频道1000V - 2.4ohm - 5A条- TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件页数： | 3/9页 |
| 文件大小： | 106K |
| 代理商： | STP5NB100 |
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD =500 V
ID =2.5 A
RG =4.7
VGS =10 V
(see test circuit, figure 3)
24
11
ns
Qg
Qgs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =800 V
ID =5 A VGS =10 V
39
9.6
19. 2
51
nC
SWITCHING OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Off-volt age Rise Time
Fall Time
Cross-over T ime
VDD =800 V
ID =5 A
RG =4.7
VGS =10 V
(see test circuit, figure 5)
20
22
26
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
)
Source-drain Current
(pulsed)
5
20
A
VSD (
)
Forward O n Voltage
ISD =5 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 5 A
di/dt = 100 A/
s
VDD =100 V
Tj =150
oC
(see test circuit, figure 5)
780
5.5
14
ns
C
A
(
) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP5NB100/STP5NB100FP
3/9
相关PDF资料 |
PDF描述 |
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| STP5NB100FP | JFET; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:50mA; Zero Gate Voltage Drain Current Max, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Leaded Process Compatible:No RoHS Compliant: No |
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| STP6X7MIG | INTERCONNECTION DEVICE |
相关代理商/技术参数 |
参数描述 |
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| STP5NB100 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP5NB100FP | 制造商:STMicroelectronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-220FP Tube |
| STP5NB40 | 功能描述:MOSFET N-Ch 400 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP5NB40FP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP5NB60 | 功能描述:MOSFET RO 511-STP4NK60Z RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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