参数资料
型号: STP5NB100
厂商: 意法半导体
英文描述: N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
中文描述: ? -频道1000V - 2.4ohm - 5A条- TO-220/TO-220FP PowerMESH MOSFET的
文件页数: 9/9页
文件大小: 106K
代理商: STP5NB100
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STP5NB100/STP5NB100FP
9/9
相关PDF资料
PDF描述
STP5NB100FP JFET; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:50mA; Zero Gate Voltage Drain Current Max, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Leaded Process Compatible:No RoHS Compliant: No
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相关代理商/技术参数
参数描述
STP5NB100 制造商:STMicroelectronics 功能描述:MOSFET N TO-220
STP5NB100FP 制造商:STMicroelectronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-220FP Tube
STP5NB40 功能描述:MOSFET N-Ch 400 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
STP5NB40FP 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP5NB60 功能描述:MOSFET RO 511-STP4NK60Z RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube