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参数资料
| 型号： | STR635FZ1T6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP144 |
| 封装： | 20 X 20 MM, TQFP-144 |
| 文件页数： | 33/51页 |
| 文件大小： | 1485K |
| 代理商： | STR635FZ1T6 |
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STR73xF
Electrical parameters
39/51
3.3.5
I/O port pin characteristics
General Characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified.
Notes:
1.
Data based on characterization results, not tested in production.
2.
When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise
refer to IINJ(PIN) specification. A positive injection is induced by VIN>V33 while a negative injection is
3.
Leakage could be higher than max. if negative current is injected on adjacent pins.
4.
Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
the I/O for example or an external pull-up or pull-down resistor. Data based on design simulation and/or
technology characteristics, not tested in production.
6.
The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding
Table 21.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage 1)
TTL ports
0.8
V
VIH
Input high level voltage 1)
2.0
IINJ(PIN) Injected Current on any I/O pin
±10
mA
ΣIINJ(PIN)
2)
Total injected current (sum of all
I/O and control pins)
±75
mA
Ilkg
Input leakage current 3)
VSS≤VIN≤VDD
±1
A
IS
Static current consumption 4)
Floating input
mode
200
A
RPU
Weak pull-up equivalent
resistor5)
VIN=VSS
55
120
220
k
RPD
Weak pull-down equivalent
resistor5)
VIN=VDD
55
120
220
k
CIO
I/O pin capacitance
5
pF
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